Fabrication of reproducible sub-5 nm nanogaps by a focused ion beam and observation of Fowler-Nordheim tunneling
Fabrication of nanodamascene metallic single electron transistors with atomic layer deposition of tunnel barrier
PDF) Monte Carlo calculations of the beam flux distribution from molecular-beam epitaxy sources
Journal of Vacuum Science & Technology B - AIP Publishing LLC
Impurity reduction in In 0.53 Ga 0.47 As layers grown by liquid phase epitaxy using Er- treated melts
Nanoscale control of energy and matter in plasma–surface interactions: Toward energy- and matter-efficient nanotecha)
PDF) Study of the NF3 plasma cleaning of reactors for amorphous silicon deposition | Giovanni Bruno - Academia.edu
PDF) Roller nanoimprint lithography. J Vac Sci Technol B
Inhomogeneous electronic states in superconductors (Chapelier, Ioffe) How to disentangle the unavoidable atomic level inhomogeneity of real materials from. - ppt download
Cu film thermal stability on plasma cleaned polycrystalline Ru
Atomic layer deposition of GaN at low temperatures
Atomic relocation processes in impurity-free disordered p -GaAs epilayers studied by deep level transient spectroscopy
Morphologic and electronic changes induced by thermally supported hydrogen cleaning of GaAs (110) facets
HSQ - Nanolithography
Reduction of exposing time in massively-parallel E-beam systems
Nouvelles technologies plasma
PDF) Synthesis of TiN/N-doped TiO 2 composite films as visible light active photocatalyst Synthesis of TiN/N-doped TiO 2 composite films as visible light active photocatalyst
PDF) Monitoring chamber walls coating deposited during plasma processes: Application to silicon gate etch processes | Laurent Vallier and Martin Kogelschatz - Academia.edu
Properties of Mn- and Co-doped bulk ZnO crystals
Ex situ Lift Out of PFIB Prepared TEM Specimens | Microscopy and Microanalysis | Cambridge Core
PDF) Suppression of the base-collector leakage current in integrated Si/SiGe heterojunction bipolar transistors
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PDF] Direct detection and imaging of low-energy electrons witk delta-doped charge-coupled devices | Semantic Scholar
Growth and characterization of germanium epitaxial film on silicon (001) with germane precursor in metal organic chemical vapour deposition (MOCVD) chamber – topic of research paper in Materials engineering. Download scholarly article
PDF) Sub-150 nm, high-aspect-ratio features using near-field phase-shifting contact lithography | Mark Horn - Academia.edu
